n-GaPp-(InSb)1-x(Sn2)x (0  х  0.05) heterostructures were fabricated and their current-voltage characteristics were studied. At low voltages V < 0.5 V the current-voltage characteristic is described by the exponential law: I = I0exp (qV / ckT) with an exponent c = 3.6, and at large voltage...

Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAs and (100) GaP substrates were grown by liquid phase epitaxy from an indium melt solution. The solid solution (InSb)1-x(Sn2)x (0 х 0.05) had a mono-crystal structure with the orientation (100), constant of the lattice as.s. = 6.486 Å and the...

Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAsand(100) GaP substrates were grown by liquid phase epitaxy fromanindiummeltsolution. The solid solution (InSb)1-x(Sn2)x (0 ≤х≤ 0.05) had a mono-crystal structurewith the orientation (100), constant of the lattice as.s. = 6.486...

In this article the parameters of pSi1-xGex solid solution was simulated by using TCAD Sentaurus program. The gap dependence on composition of solid solution was carried out. A current-voltage characteristics of the structure was simulated at different composition as well as at different carrier...