SIMULATION OF PARAMETERS OF nGe- pSi1-XGeX DIODE STRUCTURES ON TCAD SENTAURUS

In this article the parameters of pSi1-xGex solid solution was simulated by using TCAD Sentaurus program. The gap dependence on composition of solid solution was carried out. A current-voltage characteristics of the structure was simulated at different composition as well as at different carrier concentration in the film.

Posted on 6-03-2017, 22:19 by Bunyod

Author: Saidov А. S, Asatova U.P, Ismailov Sh.K., Usmonov Sh.N.
Keywords: solid solution, heterogeneous junction, band gap energy, molar composition, impurity, carrier concentration.

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