This study presents a comprehensive numerical investigation of the influence of gate oxide and buried oxide (BOX) materials on the electrothermal performance of two-dimensional MoS2-based metal–oxide–semiconductor (MOS) transistors. Particular attention is devoted to the analysis of the selfheating...

In this paper self-heating effect (SHE) and subthreshold slope (SS) at different gate and back oxide materials in 2D MoS2-based MOSFET were considered through simulation. In this study, the Al2O3 and HfO2 oxides were selected as gate oxide materials and SiO2 and HfO2 as back oxide (BOX) materials....