In this paper self-heating effect (SHE) and subthreshold slope (SS) at different gate and back oxide materials in 2D MoS2-based MOSFET were
considered through simulation. In this study, the Al2O3 and HfO2 oxides were selected as gate oxide materials and SiO2 and HfO2 as back oxide (BOX) materials. The lattice temperature in the channel center and SS dependences on the gate length were considered at different gate oxide, BOX materials, and their combinations. It is shown that using Al2O3 as gate oxide material and SiO2 as BOX material result in relatively low SS, and using HfO2 as gate oxide as well as BOX material results in high immune against SHE.