Actual problems of Mathematics, Physics and Mecanics
Actual problems in modern technical sciences
Actual problems of Natural Sciences
Actual problems of history, philosophy and sociology
Actual problems in modern tourizm and economics
Modern problems of Philology and Linguistics
Actual problems in modern pedogogy and pshychology
Actual problems in modern agriculture
Actual problems in modern art and architecture
Actual problems of Mathematics, Physics and Mecanics
METHODS OF TEACHING PARALLEL PROGRAMMING METHODS IN HIGHER EDUCATION
This article contains current issues of teaching information and communication technologies (ICT) specialists, the formation of the necessary frills of parallel programs. High-effective systems provide methodical technologies to acquire practical skills on the organization of parallel calculations....
3 October 2021, 21:58
MAGNETIC PROPERTY OF THE SUPERPARAMAGNETIC FLUID CONTAINING Ni0.5Co0.5Fe2O4 NANOPARTICLES
In this work the magnetic fluids based on the Ni0.5Co0.5Fe2O4 nanoparticles have been obtained by the chemical co-precipitation method. Morphological analysis, elemental composition of the Ni0.5Co0.5Fe2O4 nanoparticles and magnetization of the magnetic fluid were studied by transmission electron...
3 October 2021, 21:58
m - CONVEX FUNCTIONS AND THEIR PROPERTIES
In this work studies m - convex functions and some of their properties, in particular, approximation of m - convex functions and proved the m - convexity of the limit sequences of m - convex functions, m - convexity of maximum of the finite number of convex functions....
3 September 2021, 21:57
PREPARATION OF PHOTO ELEMENTS FROM CHALCOGENIDE THIN CURTAINS
The article provides information on the creation of high-efficiency photocells using the spectral composition of radiation from the sun. The results of studies on the formation of flat multilayer multi-energy, longitudinal and transverse photovoltaic cells from chalcogenide thin films are...
3 July 2021, 21:57
BALANCE OF TEMPERATURE IN SOLAR COLLECTORS BY AERODYNAMIC METHODS
At present solar collectors, when the outside temperature is + 10 0C.... + 150 C degrees, the collectors cannot store enough heat energy. It is therefore necessary to create seasonal collectors. By increasing the efficiency of solar collectors, it will be possible to dry fruits and vegetables in...
3 May 2021, 21:55
WORMHOLЕS WITH А NUT CHАRGЕ IN HIGHЕR CURVАTURЕ THЕORIЕS
Wе considеr scаlаrizеd wormholеs with а Nеwmаn-Unti-Tаmburino chаrgе in both Еinstеin-scаlаr-Gаuss-Bonnеt аnd Еinstеin-scаlаr-Chеrn-Simons thеoriеs. By vаrying thе coupling pаrаmеtеr аnd thе scаlаr chаrgе wе dеtеrminе thе scаlаrizеd wormholе solutions, аnd thеir dеpеndеncе on thе...
3 May 2021, 21:55
THERMODYNAMIC FOUNDATIONS AND METHODOLOGICAL ASPECTS OF SYNERGETICS
The article methodologically analyzes the natural-scientific aspects of synergetics based on the thermodynamics of open systems and other physical paradigms. At the same time, the science of synergetics is interpreted as a field that represents the modern picture of the scientific thought of...
3 April 2021, 05:37
A MAP OF HOMOGENEOUS FIXED POINTS OF DISCRETE DYNAMIC SYSTEMS
This article deals with the map of homogeneous fixed points of discrete dynamic systems. Dynamic systems play an important role in many scientific and practical researches around the world. The theory of dynamic systems is one of the most important areas of modern mathematics....
3 March 2021, 23:56
SIMULATION STUDY OF SHORT CHANNEL EFFECTS IN JUNCTIONLESS SOI MOSFETS
In this work influence of gate extension, channel doping level and channel thickness to short channel effects- DIBL effect and subthreshold swing,SS for the planar and vertical junctionless field effect transistors is compared. It is shown in considered range of doping level and channel thickness...
4 December 2020, 23:19
SIMULATION OF THE EFFECT OF A SINGLE INTERFACE TRAPPED CHARGE IN FINFET WITH A GATE LENGTH OF 10 NM ON THE SHORT CHANNEL EFFECTS
In the article, the effect of a single charge on the surface of the oxidesemiconductor boundary of a vertical field-effect transistor with an isolated gate length of 10 nm is studied by modeling the effects of SS and DIBL. In this case, the change in SS and DIBL depending on the position Lgx of the...
3 December 2020, 23:18