THE NECESSITY OF TEACHING SENTAURUS TCAD SOFTWARE TO FUTURE PHYSICS TEACHERS AND MASTER’S STUDENTS IN HIGHER EDUCATION INSTITUTIONS OF UZBEKISTAN
This article explores the scientific and educational significance of the Sentaurus TCAD software, a tool for physics-based modeling of semiconductor devices. It highlights the urgency of incorporating it into the training of physics teachers and master’s students in higher education institutions of...

Actual problems in modern pedogogy and pshychology / 2025 / June

Abdikarimov Azamat Egamberganovich

Volume 9 | Issue 6

3 June 2025, 21:50

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IMPACT OF OXIDE MATERIALS ON SELF-HEATING EFFECT AND SUBTHRESHOLD SLOPE IN 2D MoS2-BASED MOSFET
In this paper self-heating effect (SHE) and subthreshold slope (SS) at different gate and back oxide materials in 2D MoS2-based MOSFET were considered through simulation. In this study, the Al2O3 and HfO2 oxides were selected as gate oxide materials and SiO2 and HfO2 as back oxide (BOX) materials....

Actual problems of Mathematics, Physics and Mecanics / 2024 / September

Saparov Khushnudbek Sharipbayevich

Volume 8 | Issue 9

3 September 2024, 21:50

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SIMULATION OF THE EFFECT OF A SINGLE INTERFACE TRAPPED CHARGE IN FINFET WITH A GATE LENGTH OF 10 NM ON THE SHORT CHANNEL EFFECTS
In the article, the effect of a single charge on the surface of the oxidesemiconductor boundary of a vertical field-effect transistor with an isolated gate length of 10 nm is studied by modeling the effects of SS and DIBL. In this case, the change in SS and DIBL depending on the position Lgx of the...

Actual problems of Mathematics, Physics and Mecanics / 2020 / December

Abdikarimov Azamat Egamberganovich, Nilufar Matyusupova Bakhtiyorovna

Volume 4 | Issue 6

3 December 2020, 23:18

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INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS
It is investigated the dependence of intercapacitance between two point charges located in different environments on the relative position of border. The image method is used. It is considered two cases: the charges is located at line which is perpendicular to the border and the charges is located...

Actual problems of Mathematics, Physics and Mecanics / 2018 / December

Abdikarimov Azamat Egamberganovich, Yusupov Ahmad, Atamuratov Atabek Egamberdiyevich

Volume 2 | Issue 4

3 December 2018, 17:52

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INFLUENCE OF NON-UNIFORM LATERAL INTERFACE DEFECTS DISTRIBUTION TO THE CURRENT-VOLTAGE CHARACTERISTIC OF MOSFET
In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of...

2017 / March / Actual problems of Mathematics, Physics and Mecanics

Atamuratоv A, Abdikarimоv A, Atamuratоva Z, Хоlillaеv M, Yusupоv A

Volume 1 | Issue 1

3 March 2017, 16:45

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