It is investigated the dependence of intercapacitance between two point charges located in different environments on the relative position of border. The image method is used. It is considered two cases: the charges is located at line which is perpendicular to the border and the charges is located...

In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of...