SIMULATION OF THE EFFECT OF A SINGLE INTERFACE TRAPPED CHARGE IN FINFET WITH A GATE LENGTH OF 10 NM ON THE SHORT CHANNEL EFFECTS
In the article, the effect of a single charge on the surface of the oxidesemiconductor boundary of a vertical field-effect transistor with an isolated gate length of 10 nm is studied by modeling the effects of SS and DIBL. In this case, the change in SS and DIBL depending on the position Lgx of the...

Actual problems of Mathematics, Physics and Mecanics / 2020 / December

Abdikarimov Azamat Egamberganovich, Nilufar Matyusupova Bakhtiyorovna

Volume 4 | Issue 6

3 December 2020, 23:18

Preview Download (1.42 Mb) (2)
INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS
It is investigated the dependence of intercapacitance between two point charges located in different environments on the relative position of border. The image method is used. It is considered two cases: the charges is located at line which is perpendicular to the border and the charges is located...

Actual problems of Mathematics, Physics and Mecanics / 2018 / December

Abdikarimov Azamat Egamberganovich, Yusupov Ahmad, Atamuratov Atabek Egamberdiyevich

Volume 2 | Issue 4

3 December 2018, 17:52

Preview Download (299.49 Kb) (2)
INFLUENCE OF NON-UNIFORM LATERAL INTERFACE DEFECTS DISTRIBUTION TO THE CURRENT-VOLTAGE CHARACTERISTIC OF MOSFET
In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of...

2017 / March / Actual problems of Mathematics, Physics and Mecanics

Atamuratоv A, Abdikarimоv A, Atamuratоva Z, Хоlillaеv M, Yusupоv A

Volume 1 | Issue 1

3 March 2017, 16:45

Preview Download (778.24 Kb) (2)