SIMULATION OF PARAMETERS OF nGe- pSi1-XGeX DIODE STRUCTURES ON TCAD SENTAURUS

Author: Saidov А. S, Asatova U.P, Ismailov Sh.K., Usmonov Sh.N.

Abstract:

In this article the parameters of pSi1-xGex solid solution was simulated by using TCAD Sentaurus program. The gap dependence on composition of solid solution was carried out. A current-voltage characteristics of the structure was simulated at different composition as well as at different carrier concentration in the film.