In this study, the phase composition and crystallization kinetics of a Si-Mn heterosystem synthesized on single-crystal silicon substrates via hightemperature thermal vacuum diffusion were comprehensively investigated as a function of annealing temperature (600-1200o C) using X-ray diffraction...

The paper presents a numerical method of the diffusion process whereas duration and temperature conditions of the diffusion could be set finetuned in advance. Impurity atoms of sulfur and the transition element manganese in single-crystal silicon were selected as objects of study. Sulfur and...