THE IMPACT OF CHANNEL GEOMETRY ON SELF-HEATING TEMPERATURE IN 10 nm GAAFET
This paper investigates the impact of channel geometry on the selfheating temperature of a 10 nm gate-length GaAs-based gate-all-around fieldeffect transistor (GAAFET). The study is conducted using numerical simulations in the Sentaurus TCAD environment. While maintaining a constant channel...

Actual problems in modern technical sciences / 2025 / December

Abdikarimov Xidoyat Egamberganovich, Abdikarimov Azamat Egamberganovich

Volume 9 | Issue 12

3 December 2025, 22:00

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THE IMPORTANCE OF PHYSICAL MODELS IN SIMULATING DEGRADATION EFFECTS IN GaN NANOWIRE FETS
This article explores the critical role of physical models in simulating degradation effects in GaN nanowire field-effect transistors (NW-FETs). With the rapid advancement of nanoscale device technology, accurate prediction of electrical and radio-frequency (RF) characteristics under stress...

Actual problems of Mathematics, Physics and Mecanics / 2025 / August

Abdikarimov Azamat Egamberganovich, Aminov Doniyorbek Rashidovich

Volume 9 | Issue 8

3 August 2025, 21:50

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THE IMPORTANCE OF PHYSICS-BASED MODEL SELECTION AND RESULT CALIBRATION IN SIMULATION SUB-5NM SILICON GAAFETS
This paper investigates the critical Sentaurus role of physics-based model selection and calibration in the simulation of sub-5nm silicon Gate-AllAround Field-Effect Transistors (GAAFETs) using the TCAD environment. As transistor dimensions shrink below 5nm, classical modeling approaches become...

Actual problems in modern agriculture / 2025 / July

Abdikarimov Azamat Egamberganovich

Volume 9 | Issue 7

3 July 2025, 21:50

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THE NECESSITY OF TEACHING SENTAURUS TCAD SOFTWARE TO FUTURE PHYSICS TEACHERS AND MASTER’S STUDENTS IN HIGHER EDUCATION INSTITUTIONS OF UZBEKISTAN
This article explores the scientific and educational significance of the Sentaurus TCAD software, a tool for physics-based modeling of semiconductor devices. It highlights the urgency of incorporating it into the training of physics teachers and master’s students in higher education institutions of...

Actual problems in modern pedogogy and pshychology / 2025 / June

Abdikarimov Azamat Egamberganovich

Volume 9 | Issue 6

3 June 2025, 21:50

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BOUNDARY CONDITIONS WHEN CHOOSING GATE-OXIDE MATERIAL ON NANOSIZED DIFFERENT FinFETs
This article presents a method for calculating the electrical capacitance of the gate-oxide in field-effect transistors with an isolated gate. The choosing of the thickness of the oxide layer depending on the type of oxide material is shown at a constant capacity of the oxide layer....

Actual problems of Mathematics, Physics and Mecanics / 2022 / December

Foziljonov Mirzabahrom Baxtiyorjon o'g'li, Karimov Ibroxim Nabiyevich, Abdikarimov Azamat Egamberganovich, Matyusupova Nilufar Bakhtiyorovna

Volume 6 | Issue 12

3 December 2022, 21:50

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SIMULATION OF THE EFFECT OF A SINGLE INTERFACE TRAPPED CHARGE IN FINFET WITH A GATE LENGTH OF 10 NM ON THE SHORT CHANNEL EFFECTS
In the article, the effect of a single charge on the surface of the oxidesemiconductor boundary of a vertical field-effect transistor with an isolated gate length of 10 nm is studied by modeling the effects of SS and DIBL. In this case, the change in SS and DIBL depending on the position Lgx of the...

Actual problems of Mathematics, Physics and Mecanics / 2020 / December

Abdikarimov Azamat Egamberganovich, Nilufar Matyusupova Bakhtiyorovna

Volume 4 | Issue 6

3 December 2020, 23:18

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INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS
It is investigated the dependence of intercapacitance between two point charges located in different environments on the relative position of border. The image method is used. It is considered two cases: the charges is located at line which is perpendicular to the border and the charges is located...

Actual problems of Mathematics, Physics and Mecanics / 2018 / December

Abdikarimov Azamat Egamberganovich, Yusupov Ahmad, Atamuratov Atabek Egamberdiyevich

Volume 2 | Issue 4

3 December 2018, 17:52

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