This article presents a method for calculating the electrical capacitance of the gate-oxide in field-effect transistors with an isolated gate. The choosing of the thickness of the oxide layer depending on the type of oxide material is shown at a constant capacity of the oxide layer....

In the article, the effect of a single charge on the surface of the oxidesemiconductor boundary of a vertical field-effect transistor with an isolated gate length of 10 nm is studied by modeling the effects of SS and DIBL. In this case, the change in SS and DIBL depending on the position Lgx of the...

It is investigated the dependence of intercapacitance between two point charges located in different environments on the relative position of border. The image method is used. It is considered two cases: the charges is located at line which is perpendicular to the border and the charges is located...