As gate-all-around field-effect transistors (GAAFETs) are scaled toward sub-10 nm gate lengths and nanowire diameters, self-heating effects (SHE) become an increasingly dominant reliability and performance concern, particularly for high-mobility III–V channel materials such as GaAs whose thermal...

This paper investigates the impact of channel geometry on the selfheating temperature of a 10 nm gate-length GaAs-based gate-all-around fieldeffect transistor (GAAFET). The study is conducted using numerical simulations in the Sentaurus TCAD environment. While maintaining a constant channel...