Author: Rakhmanova Y.
Abstract:
Types of women‘s jewelry of daily wearing, their method of preparation and religious imaginations of patterns of decorations were analyzed in this article. Special features of Khorezm in the decorations were illuminated.
Author: Abdullaev U. I.
Abstract:
The article concerns the historical place of Khorezm region during the Neolithic era in Middle Asia.
Author: Rakhimov A., RajabovA., Ruzmetov R.
Abstract:
The article highlights the impact of rhizobacteria tropical leguminous plants – the restoration of indigo and convicted fertility of degraded soils Khorezm region.
Author: Ruzmetov D.R.
Abstract:
This article describes the periodic aspects of theoretical and practical achievements in the development and deployment of industrial production and theire introduction to the practice.
Author: Saidov А. S, Asatova U.P, Ismailov Sh.K., Usmonov Sh.N.
Abstract:
In this article the parameters of pSi1-xGex solid solution was simulated by using TCAD Sentaurus program. The gap dependence on composition of solid solution was carried out. A current-voltage characteristics of the structure was simulated at different composition as well as at different carrier concentration in the film.
Author: Khasanov M. M.
Abstract:
In this paper the method of inverse spectral problem applies to the integration of the modified Korteweg-de Vries equation with a loaded term.
Author: Babajanov B.A, Atajonov D.O, Azamatov Sh.A.
Abstract:
In this paper the inverse spectral problem is applied to the integration of the periodic Toda-type Lattice with an integral source.
Author: Urazbаev G.U., Hoitmetov U.A.
Abstract:
In this paper we propose a method for finding multi-soliton solutions of the matrix Korteweg-de Vries equation with a self-consistent source.
Author: Madatov Kh. А.
Abstract:
Actually, there would be problems in solving some tasks of combinatorics depending on computer memory and speed. It‘s required the
separate approach of tasks solving to solve such problems. The given article is devoted to solving such problems.
Author: AtamuratоvA.E., AbdikarimоvA., AtamuratоvaZ.A., ХоlillaеvM., YusupоvA.
Abstract:
In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show
the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of defects at the center of interface.