In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of defects at the center of interface.

In this paper the problems of a filtration of objects for metric algorithms of classification in particular, for an algorithm of the K nearest neighbors is considered. It is invited to change the class of anomalous objects which has similar regularities to improve the stability. First result and second result which was taken after the preprocessing are compared.