INFLUENCE OF NON-UNIFORM LATERAL INTERFACE DEFECTS DISTRIBUTION TO THE CURRENT-VOLTAGE CHARACTERISTIC OF MOSFET

Author: AtamuratоvA.E., AbdikarimоvA., AtamuratоvaZ.A., ХоlillaеvM., YusupоvA.

Abstract:

In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show
the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of defects at the center of interface.