PERIODIC FEATURES OF TERRITORIAL ORGANIZING OF INDUSTRY PRODUCTIONSTRENGTH

Author: Ruzmetov D.R.

Abstract:

This article describes the periodic aspects of theoretical and practical achievements in the development and deployment of industrial production and theire introduction to the practice.

6-03-2017, 22:22 Volume 1 | Issue 1
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SIMULATION OF PARAMETERS OF nGe- pSi1-XGeX DIODE STRUCTURES ON TCAD SENTAURUS

Author: Saidov А. S, Asatova U.P, Ismailov Sh.K., Usmonov Sh.N.

Abstract:

In this article the parameters of pSi1-xGex solid solution was simulated by using TCAD Sentaurus program. The gap dependence on composition of solid solution was carried out. A current-voltage characteristics of the structure was simulated at different composition as well as at different carrier concentration in the film.

6-03-2017, 22:19 Volume 1 | Issue 1
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INTEGRATION OF THE PERIODIC TODA-TYPE LATTICE WITH AN INTEGRAL SOURCE

Author: Babajanov B.A, Atajonov D.O, Azamatov Sh.A.

Abstract:

In this paper the inverse spectral problem is applied to the integration of the periodic Toda-type Lattice with an integral source.

6-03-2017, 22:17 Volume 1 | Issue 1
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MULTI-SOLITON SOLUTIONS OF THE MATRIX KORTEWEG-DE VRIES EQUATION WITH SELF-CONSISTENT SOURCE

Author: Urazbаev G.U., Hoitmetov U.A.

Abstract:

 In this paper we propose a method for finding multi-soliton solutions of the matrix Korteweg-de Vries equation with a self-consistent source.

6-03-2017, 22:15 Volume 1 | Issue 1
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THE PROBLEMS OF SOLVING SOME TASKS OF COMBINATORICS ON COMPUTER

Author: Madatov Kh. А.

Abstract:

Actually, there would be problems in solving some tasks of combinatorics depending on computer memory and speed. It‘s required the
separate approach of tasks solving to solve such problems. The given article is devoted to solving such problems.

6-03-2017, 22:13 Volume 1 | Issue 1
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INFLUENCE OF NON-UNIFORM LATERAL INTERFACE DEFECTS DISTRIBUTION TO THE CURRENT-VOLTAGE CHARACTERISTIC OF MOSFET

Author: AtamuratоvA.E., AbdikarimоvA., AtamuratоvaZ.A., ХоlillaеvM., YusupоvA.

Abstract:

In the paper the influence of the defect lateral distribution on drain current in nanometer MOSFET is considered.The simulation results show
the drain current depends on lateral as well as longitudinal distribution of interface defects. Maximal change of the drain current is seen at localisation of defects at the center of interface.

5-03-2017, 19:15 Volume 1 | Issue 1
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SEARCHING THE REGULARITIES ON SOCIOLOGICAL RESEARCH DATA OF MENTALITY

Author: Matlatipov G, Mattiev J

Abstract:

In this paper the problems of a filtration of objects for metric algorithms of classification in particular, for an algorithm of the K nearest neighbors is considered. It is invited to change the class of anomalous objects which has similar regularities to improve the stability. First result and second result
which was taken after the preprocessing are compared. 

4-03-2017, 18:42 Volume 1 | Issue 1
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