FEATURES OF CURRENT TRANSFER IN n-GaPp-(InSb)1-x(Sn2)x HETEROSTRUCTURE
n-GaPp-(InSb)1-x(Sn2)x (0 х 0.05) heterostructures were fabricated and their current-voltage characteristics were studied. At low voltages V < 0.5 V the current-voltage characteristic is described by the exponential law: I = I0exp (qV / ckT) with an exponent c = 3.6, and at large voltage...
Actual problems of Mathematics, Physics and Mecanics / 2019 / December
Asatova Umida Palvanovna
Volume 3 | Issue 4