The Hall effect method was used to determine the concentration of electroactive impurity atoms in silicon. Using the method of nonstationary capacitance spectroscopy (DLTS), the values of deep levels created by impurity nickel atoms were determined....

n-GaPp-(InSb)1-x(Sn2)x (0  х  0.05) heterostructures were fabricated and their current-voltage characteristics were studied. At low voltages V < 0.5 V the current-voltage characteristic is described by the exponential law: I = I0exp (qV / ckT) with an exponent c = 3.6, and at large voltage...

Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAs and (100) GaP substrates were grown by liquid phase epitaxy from an indium melt solution. The solid solution (InSb)1-x(Sn2)x (0 х 0.05) had a mono-crystal structure with the orientation (100), constant of the lattice as.s. = 6.486 Å and the...

Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAsand(100) GaP substrates were grown by liquid phase epitaxy fromanindiummeltsolution. The solid solution (InSb)1-x(Sn2)x (0 ≤х≤ 0.05) had a mono-crystal structurewith the orientation (100), constant of the lattice as.s. = 6.486...