FEATURES OF CURRENT TRANSFER IN n-GaPp-(InSb)1-x(Sn2)x HETEROSTRUCTURE
n-GaPp-(InSb)1-x(Sn2)x (0  х  0.05) heterostructures were fabricated and their current-voltage characteristics were studied. At low voltages V < 0.5 V the current-voltage characteristic is described by the exponential law: I = I0exp (qV / ckT) with an exponent c = 3.6, and at large voltage...

Actual problems of Mathematics, Physics and Mecanics / 2019 / December

Asatova Umida Palvanovna

Volume 3 | Issue 4

3 December 2019, 01:36

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STRUCTURAL FEATURES OF SOLID SOLUTIONS (InSb)1-x(Sn2)x FILMS GROWN FROM A LIQUID PHASE ON GaAs SUBSTRATES AND SOME PHOTOELECTRIC PROPERTIES OF HETEROSTRUCTURES ON THEIR BASIS
Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAs and (100) GaP substrates were grown by liquid phase epitaxy from an indium melt solution. The solid solution (InSb)1-x(Sn2)x (0 х 0.05) had a mono-crystal structure with the orientation (100), constant of the lattice as.s. = 6.486 Å and the...

Actual problems of Mathematics, Physics and Mecanics / 2019 / August

Saidov Amin Safarbayevich, Usmonov Shukrullo Negmatovich, Asatova Umida Palvanovna, Tolmas Ishniyazov

Volume 3 | Issue 3

3 August 2019, 15:41

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STRUCTURAL FEATURES OF SOLID SOLUTIONS (InSb)1-x(Sn2)x FILMS GROWN FROM A LIQUID PHASE ON GaAs SUBSTRATES AND SOME PHOTOELECTRIC PROPERTIES OF HETEROSTRUCTURES ON THEIRBASIS
Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAsand(100) GaP substrates were grown by liquid phase epitaxy fromanindiummeltsolution. The solid solution (InSb)1-x(Sn2)x (0 ≤х≤ 0.05) had a mono-crystal structurewith the orientation (100), constant of the lattice as.s. = 6.486...

Actual problems of Mathematics, Physics and Mecanics / 2019 / July

Saidov Amin Safarbayevich, Usmonov Shukrullo Negmatovich, Asatova Umida Palvanovna, Tolmas Ishniyazov

Volume 3 | Issue 2

3 July 2019, 13:58

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