The results of studies of photoelectric properties of epitaxial layers of new solid solutions (Ge2 )0,02(ZnSe )0,03(GaAs)0,95 and structures based on them obtained by liquid-phase epitaxial method are presented. Photosensitivity is observed in the spectral range of 1.38÷2.58 eV, indicating the formation of Ge donor energy band and interzone cascade photogeneration of electron-hole pairs in (Ge2)0,02(ZnSe)0,03(GaAs)0,95 layer of the n-p transition.