We have modelled the process of ion implantation at low angles of incidence on the Mo (001)<110> surface with an initial energy of 1-5 keV. The pair collision approximation method was used in the modelling process. We obtained the dependence of the number of implanted O ions on Mo (001) <110> at different angles of incidence. It was shown that at small angles of incidence, the ion implantation process can be observed. It was established that the number of implanted particles increased in the angle of incidence range up to 10°. With an increase in the initial energy value, this range decreases. This is due to increasing in the proportion of particles scattered from the surface.