Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAs and (100) GaP substrates were grown by liquid phase epitaxy from an indium melt solution. The solid solution (InSb)1-x(Sn2)x (0 х 0.05) had a mono-crystal structure with the orientation (100), constant of the lattice as.s. = 6.486 Å and the...
Actual problems of Mathematics, Physics and Mecanics / 2019 / August
Layers of solid solutions (InSb)1-x(Sn2)x on (100) GaAsand(100) GaP substrates were grown by liquid phase epitaxy fromanindiummeltsolution. The solid solution (InSb)1-x(Sn2)x (0 ≤х≤ 0.05) had a mono-crystal structurewith the orientation (100), constant of the lattice as.s. = 6.486...
Actual problems of Mathematics, Physics and Mecanics / 2019 / July