The integration of III–V semiconductors into silicon technology remains one of the key challenges for the development of efficient silicon-based optoelectronic devices. In this work, the thermodynamic stability and phase stability of a continuous solid solution (Si₂)₁₋ₓ(GaP)ₓ formed via molecular...

In this work, the structural and electronic properties of gallium phosphide (GaP) and (Si2)x(GaP)1-x solid solution were modeled using the density functional theory (DFT). This method is an efficient and accurate method for calculating some parameters of semiconductor materials. The hybrid...