The fluence of the mass of bombardment atoms on the formation of defects and there clusters on the surface of Si crystals using the SIMS and SRIM methods is investigated. It is shown that the formed interstitial defects on the surface lead to the sputtering of cluster ions, and vacancies affect the...

The total current electron spectroscopy was used to study the silicon surface. In the spectra of the total current n at an excitation energy of 0,5-0,9 eV, an oxygen-deficient center was found. It was found that at high silicon temperatures, the intensity of this peak is low. It is shown that with...