ANGULAR AND ENERGY DISTRIBUTIONS OF LOW-ENERGY ARGON IONS AT THE SCATTERING FROM AIIIB V SEMICONDUCTOR SURFACE

The Ar+ ions scattering from the InP(001)<110>,<ī10> surfaces at the grazing incidence have been simulated by the computer simulation method. The trajectory, energy and angular distributions of scattered argon ions on above mentioned surface semichannels have been calculated.

Posted on 11-06-2018, 14:37 by Bunyod

Author: Karimov Muxtor Karimberganovich, Tangriberganov Ismail Urazboyevich, Qurbanov Muzaffar Kadamboyevich, Kutliev Uchkun Otoboevich, Otaboev Mexroj Uchkun o’g’li
Keywords: Computer simulation, ion scattering, semichannels, semiconductors

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